Design and Comprehensive Analysis of FinFET Spacers for Advanced Semiconductor Devices
DOI:
https://doi.org/10.22399/ijcesen.4477Keywords:
FinFET, Spacer, Single k, Dual k, Sub threshold SwingAbstract
In modern semiconductor technology era focus more on performance improvement and reduction in size while realizing advanced applications using FinFETs (Fin Field-Effect Transistors). In this implementation process Spacers plays a crucial role for maintaining the proper energy efficiency to improve the performance. The main objective of this study investigates the impact of the spacer width and height dimension on the driving current, subthreshold slope (SS) and leakage current offered by the FinFET.The variability in FinFET performance caused by changes in spacer settings and process circumstances is evaluated using statistical analysis. In this study the comparative analysis between Single K and Dual K spacer techniques concentrates on Process variations and sub-threshold swing with different spacer materials. A variety of advanced modelling techniques are used to quantify and analyse the influences in order to maintain a trade-off in the spacer design.
During the implementation process, it was found that when hafnium (HfO2) and nitride were combined, the underlap length of 2 nm produced improved electrical features with reduced drain induced barrier lowering (DIBL) up to 40 mV/V, whereas in air space, the DIBL was found to be 84 mV/V. When compared to single K dielectrics, dual K dielectrics improve subthreshold swing by attaining 75–78 mV/dec.
An essential component of improved FinFET-based applications is spacer engineering. Performance measures such as DIBL, SS, and variability are impacted by material selection, dimensional tuning, and gate-stack design spacer settings. This study offers a framework for the development of future-generation FinFET-based device.
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