Numerical Analysis and Performance Enhancement of Nanostructured CdTe Solar Cells

Abstract

The research presented in this article is predicated on a thorough examination of methods to enhance the efficiency of thin film solar cells using CdTe compound material. The presented method employs the numerical modeling program SCAPS 1D. This program is based on the Poisson equation, which connects charge carriers to electrostatic potential, and the continuity equation, which describes how charge carriers move. We focused on studying the effect of illumination and the thickness of the CdTe absorbing layer on the performance and efficiency of the solar cell, including parameters related to the solar cell outputs such as short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), efficiency (η), and the quantum yield of the cell. The results of the numerical simulations using the program showed that the CdTe cell behaves like a p-n junction. The results indicated that the thickness of the absorbing layer has a significant impact on the parameters related to the solar cell outputs, with the best results recorded at a thickness of 4μm compared to other thicknesses, while the quantum yield of the solar cell at the same thickness was 89.85% at a wavelength of 660 nm.