Comparative study of etching silicon wafers with NaOH and KOH solutions

Authors

  • M. MAOUDJ CRTSE, Division Développement des Dispositifs de Conversion à Semi-conducteurs, 02 Bd Frantz Fanon, BP 140 Alger 7- merveilles, Algiers, Algeria, University Ferhat Abbas, Faculty of Technology, Department of Electronics, Setif, Algeria.
  • D. BOUHAFS CRTSE, Division Développement des Dispositifs de Conversion à Semi-conducteurs, 02 Bd Frantz Fanon, BP 140 Alger 7- merveilles, Algiers, Algeria
  • N. BOUROUBA University Ferhat Abbas, Faculty of Technology, Department of Electronics, Setif, Algeria.
  • R. BOUFNİK CRTSE, Division Développement des Dispositifs de Conversion à Semi-conducteurs, 02 Bd Frantz Fanon, BP 140 Alger 7- merveilles, Algiers, Algeria
  • A.El AMRANİ CRTSE, Division Développement des Dispositifs de Conversion à Semi-conducteurs, 02 Bd Frantz Fanon, BP 140 Alger 7- merveilles, Algiers, Algeria
  • A.Hamida FERHAT University Ferhat Abbas, Faculty of Technology, Department of Electronics, Setif, Algeria.

Keywords:

Surface morphology, Surface passivation, Carrier lifetime, Optical reflection

Abstract

In this study, we investigated the effects of alkaline post-etching surface morphology on minority carrier lifetime of the p-type monocrystalline silicon wafers. A Sodium hydroxide and potassium hydroxide solutions at 30% and 23%, respectively, have been used at constant temperature. The surface states were characterized by calculation of the arithmetical average roughness (Ra) and the UV–visible-NIR optical reflectivity, whereas, the electrical characterization was done by means of quasi-steady state photoconductance measurements, which revealed a correlation between the resulted surface state and the minority carrier lifetime. The Measured surface roughness shown that potassium hydroxide solutions at 23% by weight gave a high minority carriers lifetime.

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Published

2015-07-30

How to Cite

MAOUDJ, M., BOUHAFS, D., BOUROUBA, N., BOUFNİK, R., AMRANİ, A., & FERHAT, A. (2015). Comparative study of etching silicon wafers with NaOH and KOH solutions. International Journal of Computational and Experimental Science and Engineering, 1(2), 7–11. Retrieved from https://ijcesen.com/index.php/ijcesen/article/view/212

Issue

Vol. 1 No. 2 (2015): IJCESEN

Section

Research Article

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Copyright (c) 2023 International Journal of Computational and Experimental Science and Engineering

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